The random access memory is of two
types out of which one is dynamic random access memory or DRAM and the other
one is SRAM or static random access memory.
Here we shall focus up on the
first type i.e., the Dynamic RAM.
What is Dynamic Random Access Memory (DRAM)?
- In dynamic RAM, each bit of the data is stored
in a separate capacitor.
- All these capacitors are housed within an IC
(integrated circuit).
- These capacitors can be in either of the two states:
- Charged and
- Discharged
- The two values of a bit are
represented by means of these two states only.
- The two values of bit are 0 and
1.
- However, there is a disadvantage of the dynamic RAM.
- These capacitors tend to
leak charge and therefore may lose all the stored information.
- Therefore, it is
very important to keep the capacitors flushing with fresh charge.
- They are
refreshed at regular intervals of time.
- It is because of this refreshing
requirement this type of RAM has been named so.
- The main memory or the physical memory of the
CPU is constituted of this dynamic RAM only.
- Apart from desktops, DRAM is also
used in workstation systems, laptops, video game consoles etc.
- The structural
simplicity is one of the biggest advantages of the DRAM.
- For each bit it only
requires one capacitor and one transistor, whereas SRAM requires 4 to 6
transistors for the same purpose.
- This enables the dynamic RAM to attain very
high density.
- DRAM is a volatile memory unlike the flash memory and so it loses
data whenever the power supply is cut.
- The capacitors and the transistors it
uses are extremely small and so billions of them can be easily be integrated in
to one single memory chip.
- DRAM consists of array of charge storage cells
arranged in a sort of rectangular way.
- Each of the cells consists of one
transistor and one capacitor.
- Word lines are the horizontal lines that
connect the rows with each other.
- Two bit lines compose each of the columns
of cells.
- These lines are called the + and – bit lines.
- It is specified by the
manufacturers that at what rate the storage cell capacitors are to be
refreshed.
- Typically, it is less than or equal to 64 ms.
- The DRAM controller
consists of the refresh logic that is responsible for automating the periodic
refresh.
- This job cannot be done by any other software and hardware.
- Thus, the
circuit of the controller is very complicated.
- The capacity of DRAM per unit
surface is greater than that of the SRAM.
- Some systems may refresh one row at
one instant while others may refresh all the rows simultaneously every 64 ms.
- Some systems use an external timer based up on
whose timing they refresh a part of the memory.
- Many of the DRAM chips come
with a counter that keeps track of which row is to be refreshed next.
- However, there are some conditions under which the data can be recovered even if the
DRAM has not been refreshed since few minutes.
- Bits of the DRAM might flip to
opposite state spontaneously because of the electromagnetic interference in
the system.
- Background radiation is the major cause for the occurrence of the
majority of the soft errors.
- Because of these errors the contents of the memory
cells may change and circuitry might be harmed.
- Redundant memory bits along
with the memory controllers are one potential solution to this problem.
- These
bits are within the modules of the RAM.
- The parity is recorded by these bits
which enable the reconstruction of the missing data via ECC or error –
correcting code.
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